Memory-Niche dynamic random access memory-

W9425G6JH

brand：Winbond

Description：The W9425G6JH is a 256M DDR SDRAM and speed involving -4/-5/-5I/-5A

Packaging：

Packaging：Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant

Lead-free status/ROHS： No

Category：Niche dynamic random access memory

Seller：科通芯城自营

Parameter	Value
Voltage	2.4V~2.7V
Voltage	2.5V ±0.2V
Package	Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
Status	P
Organization	16Mbitx16/4 Banks
RoHS	Y
Speed Grade	CL3//-5/-5I/-5A/200 MHz
Speed Grade	CL3/CL4//-4/250 MHz
Organization	16Mbitx16
Voltage	2.4V~2.7V 2.5V ±0.2V
Speed	-4_250MHz_CL3/CL4, -5/-5I_200MHz_CL3
Package	Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
Status	P
RoHS	Y

Description
The W9425G6JH is a 256M DDR SDRAM and speed involving -4/-5/-5I/-5A Status: Mass Production
Features
2.5V ±0.2V Power Supply for DDR400
2.4V~2.7V Power Supply for DDR500
Up to 250 MHz Clock Frequency
Double Data Rate architecture; two data transfers per clock cycle
Differential clock inputs (CLK and /CLK)
DQS is edge-aligned with data for Read; center-aligned with data for Write
CAS Latency: 2, 2.5, 3 and 4 ?
Burst Length: 2, 4 and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = 1
7.8μS refresh interval (8K/64 mS refresh)
Maximum burst refresh cycle: 8
Interface: SSTL_2

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W9425G6JH

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