| 参数 |
数值 |
| Voltage |
2.7V - 3.6V |
| Status |
NRFND |
| Density |
64Mbit(8MB) |
| comment |
Recommend W25Q64FV for new designs |
| Organization |
32768 pages,4KB sectors,32/64KB blocks,Dual/Quad-SPI |
| Package(s) |
SOIC8 208mil, SOIC16 300mil,WSON 8x6mm, PDIP8 300mil |
| RoHS |
Y |
| Speed |
80MHz(160/320MHz Dual/Quad-SPI) |
| Temp |
-40 to+85 |
| Density |
64Mbit
(8MB) |
| Organization |
32768 pages,
4KB sectors,
32/64KB blocks,
Dual/Quad-SPI |
| Voltage |
2.7V - 3.6V |
| Temp |
—40
to+85 |
| Speed |
80MHz
(160/320MHz
Dual/Quad-SPI) |
| Comment |
Recommend
W25Q64C |
| Package |
SOIC8 208mil, SOIC16 300mil,
WSON 8x6mm, PDIP8 300mil |
| Status |
NRFND |
| RoHS |
Y |
Description
64M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI
Features
Dual/Quad Serial Peripheral Interface
Uniform 4KB erasable sectors & 32KB/64KB erasable blocks
32,768 pages (256 bytes), page program in 0.7mS (typ.)
Single/Dual/Quad Fast Read instructions
Clock operation up to 80MHz (320MHz equivalent with Quad I/O Read)
2.7 to 3.6V power supply
4mA active read current, 1μA power down current
-40° to +85°C operating range
Erase suspend / resume, Suspend Status Bit
Factory-programmed unique ID
Electronic ID, Hardware and software write protection for top or bottom blocks
Lock-Down and OTP protection
文档(Document)
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