参数 |
数值 |
Voltage |
2.7V - 3.6V |
Status |
NRFND |
Density |
16Mbit(2MB) |
comment |
Recommend W25Q16CV for new designs |
Organization |
8192 pages,4KB sectors,32/64KB blocks,Dual/Quad-SPI |
Package(s) |
SOIC8 150mil,SOIC8 208mil, SOIC16 300mil,WSON 6X5mm,PDIP8 300mil |
RoHS |
Y |
Speed |
80/104MHz(160/320MHz Dual/Quad-SPI) |
Temp |
-40 to+85 |
Density |
16Mbit
(2MB) |
Organization |
8192 pages,
4KB sectors,
32/64KB blocks,
Dual/Quad-SPI |
Voltage |
2.7V - 3.6V |
Temp |
—40
to+85 |
Speed |
80/104MHz
(160/320MHz
Dual/Quad-SPI) |
Comment |
Recommend
W25Q16CV |
Package |
SOIC8 150mil,
SOIC8 208mil, SOIC16 300mil,
WSON 6X5mm,
PDIP8 300mil |
Status |
NRFND |
RoHS |
Y |
Description
16M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI
Features
Dual/Quad Serial Peripheral Interface
Uniform 4KB erasable sectors & 32KB/64KB erasable blocks
8,192 pages (256 bytes), page program in 0.7mS (typ.)
Single/Dual/Quad Fast Read instructions
Clock operation up to 104MHz (416MHz equivalent with Quad I/O Read)
2.7 to 3.6V power supply
4mA active read current, 1μA power down current
-40° to +85°C operating range
Erase suspend / resume, Suspend Status Bit
Factory-programmed unique ID
Electronic ID with Dual/Quad I/O, Hardware and software write protection for top or bottom blocks
Lock-Down and OTP protection