参数 |
数值 |
Voltage |
2.5V±0.2V |
Package |
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant |
Status |
EOL |
Organization |
32Mbitx8/4 Banks |
RoHS |
Y |
Speed Grade |
CL3//-5/200 MHz |
Organization |
32Mbitx8 |
Voltage |
2.5V±0.2V |
Speed |
-5_200MHz_CL3 |
Package |
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant |
Status |
EOL |
RoHS |
Y |
Description
The W9425G8EH is a 256M DDR SDRAM and speed involving -5/-6/-75 Status: End of life
Features
2.5V ±0.2V Power Supply for DDR266/333/400
Up to 200 MHz Clock Frequency
Double Data Rate architecture; two data transfers per clock cycle
Differential clock inputs (CLK and /CLK)
DQS is edge-aligned with data for Read; center-aligned with data for Write
CAS Latency: 2, 2.5 and 3
Burst Length: 2, 4 and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = 1
7.8μS refresh interval (8K/64 mS refresh)
Maximum burst refresh cycle: 8
Interface: SSTL_2