存储器-EEPROM-AT28C256-15LM/883

参数	数值
Organization	32K x 8
Speed	150, 200, 250, 300, 350 ns
Density	256Kb
Operating Voltage (Vcc)	4.5-5.5
速度	150ns
存储器格式	EEPROMs - Parallel
接口	Parallel
存储器类型	EEPROM
存储器大小	256K (32K x 8)
工作电压	4.5 V ~ 5.5 V
工作温度	-55°C ~ 125°C

High-performance 256K EEPROM offers access times to 150ns with power dissipation of 440mW. Deselected, CMOS standby current is less than 200μA .It is accessed like static RAM for the read or write cycle without external components. It contains a 64-byte page register to allow writing of up to 64bytes simultaneously.The EEPROM features Internal error correction for extended endurance and improved data retention. Optional software data protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.

文档(Document)

序号	PDF	描述
1	文档(Document)	AT28C256 Complete (文件大小: 675419, 25 页:, 修订 M, 更新: 12/2009) 256K EEPROM with 64-Byte Page & Software Protection
2	文档(Document)	EEPROM Data Protection (8 页:, 更新: 10/1998) Atmel EEPROMs use built in hardware and software features to protect against inadvertant programming due to extrnally introduced noise pulses during normal system operation and power transitions. 3 measures of hardware protection combined with software d
3	文档(Document)	Programmer Support for Parallel EEPROMs (文件大小: 201901, 3 页:, 修订 D, 更新: 11/2004)
4	文档(Document)	Software Chip Erase (文件大小: 35231, 4 页:, 更新: 10/1998) Atmel EEPROMs feature Software Chip Erase which allows erasure of the entire memory contents in one step using a 6-byte code.
5	文档(Document)	Atmel System Peripheral and Memory Products Brochure (文件大小: 2998556, 10 页:, 修订 A, 更新: 12/2011)
6	文档(Document)	Die Products (文件大小: 54158, 4 页:, 修订 F, 更新: 10/2005)
7	文档(Document)	Standard Microcircuit Drawings Product Offering (24 页:, 更新: 06/1998)
8	文档(Document)	AT28C256 Reliability Qualification Report (文件大小: 73728, 10 页:, 更新: 10/2008)
9	文档(Document)

AT28C256-15LM/883

文档(Document)

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