| 参数 | 数值 |
|---|---|
| Speed | 200, 250 ns |
| Density | 1Mb |
| Organization | 128K x 8 |
| Operating Voltage (Vcc) | 3.0-3.6 |
| 速度 | 200ns |
| 存储器格式 | EEPROMs - Parallel |
| 接口 | Parallel |
| 存储器类型 | EEPROM |
| 存储器大小 | 1M (128K x 8) |
| 工作电压 | 3 V ~ 3.6 V |
| 工作温度 | -40°C ~ 85°C |
High-performance 1M EEPROM offers access times to 200ns with 54mW power dissipation and 3.0V supply voltage. Deselected, CMOS standby current is less than 20µA . It is accessed like static RAM for the read or write cycle without external components, it contains a 128-byte page register to allow writing of up to 128 bytes simultaneously. The EEPROM features Internal error correction for extended endurance and improved data retention. Optional software data protection mechanism guards against inadvertent writes, and an extra 128 bytes of EEPROM enables device identification or tracking.
| 序号 | 描述 | |
|---|---|---|
| 1 |
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AT28LV010 Complete 1M bit EEPROM with 128-Byte Page & Software Protection, 3.0-Volt |
| 2 |
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EEPROM Data Protection Atmel EEPROMs use built in hardware and software features to protect against inadvertant programming due to extrnally introduced noise pulses during normal system operation and power transitions. 3 measures of hardware protection combined with software d |
| 3 |
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Programmer Support for Parallel EEPROMs |
| 4 |
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Software Chip Erase Atmel EEPROMs feature Software Chip Erase which allows erasure of the entire memory contents in one step using a 6-byte code. |
| 5 |
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Atmel System Peripheral and Memory Products Brochure |
| 6 |
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Die Products |
| 7 |
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Standard Microcircuit Drawings Product Offering |
| 8 |
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