High-performance 1-megabit EEPROM offers access times to 200ns with power dissipation of 440mW. It is accessed like static RAM for the read or write cycle without external components. It contains a 256-byte page register to allow writing of up to 256-bytes simultaneously.The EEPROM features Internal error correction for extended endurance and improved data retention. Optional software data protection mechanism guards against inadvertent writes, and an extra 256 bytes of EEPROM enables device identification or tracking.
粤公网安备 44030502003347号