Description
The W967D6B-GW is a 128M-bit pseudo static random access memory (PSRAM) organized as 8M words by 16 bits. It provides high density、high speed and low power.
Features
Asynchronous SRAM interface compatible
Synchronous burst mode interface supported; maximum clock rate 133MHz
Fast Access Cycle Time、tCE = 70ns
8-Word Page Mode Access Capability tPAA = 20ns
Burst Read/Write Access Capability tAC = 11ns
Low Voltage Operation Condition: VDD = 1.7V to 1.95V、VDDQ = 1.7V to 1.95V
Wide Operation Temperature TA = -30c~85c
Byte Control by UB and LB
Sleep Mode and Partial Self Refresh Mode supported
Fixed latency for burst read/write mode so that WAIT can be ignored in synchronous application.