存储器-SDRAM-W966D6E

W966D6E

品牌：Winbond

描述：The W966D6E is a 64M byte、CMOS pseudo-static random access memories developed for low-power、portable

包装：

封装：N/A

无铅情况/ROHS：有铅

类别：SDRAM

经营商：科通芯城自营

参数
描述

参数	数值
I/O	X16
Package	N/A
Status	UD (Q2/’08)
Density	64 Mb
Category	PSRAM
RoHS	-
Spec	Non-MUX 133MHz / 70ns / Page
Vdd / Vddq	3V / 3V

Description
The W966D6E is a 64M byte、CMOS pseudo-static random access memories developed for low-power、portable applications、organized as 4 Meg x 16 bits. Develop for low power、portable application.
Features
VCC、VCCQ Voltages:1.7V–1.95V VCC、1.7V–1.95V VCCQ
Random access time: 70ns
Burst mode READ and WRITE access:
4、8、16、or 32 words、or continuous burst
Burst wrap or sequential、Max clock rate: 133 MHz (tCLK = 7.5ns)
On-chip temperature compensated refresh (TCR)
Partial array refresh (PAR)
Deep power-down (DPD) mode
Operating temperature rang: -30C~85C

W966D6E

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