Description
The W966A6B-GW is a 64M-bit pseudo static random access memory (PSRAM) organized as 4M words by 16 bits. It provides high density、high speed and low power. The device operates single power supply. The device also features SRAM-like W/R timing whereby the device is controlled by CE1、OE 、WE and on asynchronous. The device has the page access operation. Page size is 8 words. The device also supports deep power-down mode、realizing low-power standby.
Features
Asynchronous SRAM interface compatible
Synchronous burst mode interface supported
Fast Access Cycle Time、tCE = 65ns
8-Word Page Mode Access Capability tPAA = 20ns
Burst Read/Write Access Capability tAC = 10ns
Low Voltage Operation Condition VDD = 2.6V~3.3V / VDDQ = 2.6V~3.3V
Wide Operation Temperature TA = -30c~85
Byte Control by UB and LB
Low Power Consumption
Sleep Mode and Partial Self Refresh Mode supported
Fixed latency for burst read/write mode so that WAIT can be ignored in synchronous application