| 参数 |
数值 |
| Voltage |
1.8V / 1.8V |
| Package |
90VFBGA |
| Status |
P |
| Density |
512 Mbit |
| Organization |
x32 |
| RoHS |
Y |
| Speed Grade |
200MHz, -25 to 85C |
Description
This is a 512Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 32bits
Features
Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V
Data width: x32
Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz
Standard Self Refresh Mode
PASR、ATCSR、Power Down Mode、DPD
Programmable output buffer driver strength
Four internal banks for concurrent operation
CAS Latency: 2 and 3
Burst Length: 2、4 、8 and 16
Operating Temperature Range: Extended (-25°C ~ 85°C), Industrial (-40°C ~ 85°C)
Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver
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