参数 |
数值 |
Package (mm) |
10-pad MCM, 3 x 3 x 0.9 |
Typical Gain (dB) |
— |
Typical Linear LTE Power (dBm) |
28 |
Frequency (MHz) |
777-798 |
Description |
PAM for LTE/EUTRAN Bands XIII/XIV (777-798 MHz) |
Typical PAE (%) |
36 |
Supply Voltage (V) |
3.2-4.2 |
The SKY77708 Power Amplifier Module (PAM) is a fully matched, surface mount module developed for LTE / EUTRAN applications. This small and efficient module packs full coverage of LTE Bands XIII / XIV into a single compact package. The SKY77708 meets the stringent spectral linearity requirements of LTE modulation with QPSK / 16QAM modulations from 1.4 MHz to 20 MHz bandwidth and full or partial resource block allocations with high power added efficiency. The single Gallium Arsenide (GaAs) Microwave Monolithic Integrated Circuit (MMIC) contains all active circuitry in the module, including the PA, input, and interstage matching. Output match is realized offchip within the module package to optimize efficiency and power performance into a 50 Ω load. The SKY77708 is manufactured with Skyworks’ BiFET process which provides for all positive voltage DC supply operation while maintaining high efficiency and good linearity. Primary bias is supplied via the VCC1 and VCC2 pads directly from battery output in the 3.2 to 4.2 volt range. Power-down is accomplished by setting a logic low level on the VEN pad. No external supply side switch is needed as typical “off” leakage is a few microamperes with full primary voltage supplied from the battery. The VMODE_0 and VMODE_1 pads are used to switch between high, medium and low power modes to reduce current consumption and gain in the back-off conditions.