参数 |
数值 |
Supply Voltage (V) |
3.0-4.6 |
Package (mm) |
30-pin MCM, 8 x 6 x 1.1 |
Typical PAE (%) |
55 55 52 52 - - - - - |
Frequency (MHz) |
824-849 880-915 1710-1785 1850-1910 1920-1980 1850-1910 1750-1780 824-849 880-915 |
Description |
Multiband/Multimode Power Amplifier Module GSM850 GSM900 DCS1800 PCS1900 WCDMA B1 WCDMA B2 WCDMA B4 WCDMA B5 WCDMA B8 |
Typical Gain (dB) |
- - - - 26.7 26.5 26.5 26.4 26.4 |
Typical Imax (mA) |
- - - - 515 610 535 520 515 |
Skyworks SKY77432 is a true multi-mode, multi-band Power Amplifier Module (PAM). The device is intended to support 2.5G and 3G handsets and operates efficiently in GSM, EGPRS, EDGE and WCDMA modes. The SKY77432 consists of separate high-band and low-band GaAs HBT PA blocks, with matching circuitry for 100 Ω differential input and 50 Ω single-ended output impedances. The module supports a direct power control. Power control and GSM power ramps are controlled by the Vcc supply only. The amplifier has two modes: Linear mode used for WCDMA and EDGE transmission, and high efficiency mode for GSM–GMSK transmission. Mode is controlled by the logic level control named Mode. The operating frequency band is selected with the logic level control Band. Bias and control circuits are supplied from VREG and VBAT voltages. The PA is put in to sleep mode by setting Ibias to 0 μA. 2.5G: The SKY77432 supports the GSM850, EGSM900, DCS1800, and PCS1900 bands. The device also supports 2.5G Class 12 Enhanced General Packet Radio Service (EGPRS) multi-slot operation and EDGE linear modulation. 3G: This Load Insensitive Power Amplifier (LIPA?) helps support WCDMA, High-Speed Downlink Packet Access (HSDPA), and High-Speed Uplink Packet Access (HSUPA) modulation at a high antenna Voltage Standing-Wave Ratio (VSWR). This functionality covers multiple bands for 3GPP including bands I, II, III, IV, V and VIII. RF input (differential 100 Ω) and output ports (50 Ω) are internally matched to reduce the number of required external components. Extremely low leakage current maximizes handset standby time. The InGaP HBT die, the silicon die, and passive components are mounted on a multi-layer laminate substrate. The assembly is encapsulated with plastic over-mold. The device is mounted in a 30-pad, 6 mm x 8 mm x 1.1 mm Multi Chip Module (MCM), Surface-Mounted Technology (SMT) package, which allows for a highly manufacturable lowcost solution.