参数 |
数值 |
Frequency (MHz) |
824-849 880-915 1710-1785 1850-1910 |
Supply Voltage (V) |
3.0-4.8 |
Typical Gain (dB) |
- - - - |
Package (mm) |
13-pad MCM, 5 x 5 x 1.0 Bottom of Form |
Typical PAE (%) |
55.0 55.0 55.0 55.0 |
Description |
PAM for Quad-Band GSM/GPRS GSM850 GSM900 DCS1800 PCS1900 |
Typical Output Power (dbm) GSM/EDGE |
35.5 35.5 33.5 33.5 |
SKY77351 -13 Power Amplifier Module (PAM) is designed in a compact form factor for quad-band cellular handsets comprising GSM850/900, DCS1800 and PCS1900, supporting fixed gain Gaussian Minimum-Shift Keying (GMSK) and linear Enhanced Data for GSM Evolution (EDGE) modulation. Class 12 General Packet Radio Service (GPRS) multi-slot operation is also supported. The module consists of GSM850/900 PA and DCS1800/PCS1900 PA blocks, impedance matching circuitry for 50 Q input and output impedances, and a Multi-function Power Amplifier Control (MFC) block. A custom BiCMOS 1C provides the internal MFC function and interface circuitry. Two separate Heterojunction Bipolar Transistor (HBT) PA blocks are fabricated onto a single InGaP die; one supports the GSM850/900 bands, the other the DCS1800/PCS1900 bands. Both PA blocks share common power supply pads to distribute current. The InGaP and silicon dies and the passive components are mounted on a multi-layer laminate substrate. The entire assembly is encapsulated with plastic overmold. RF input and output ports of the SKY77351 -13 are internally matched to a 50 Q load to reduce the number of external components. Extremely low leakage current (15 uA, typical) of the PAM module maximizes handset standby time. The SKY77351-13 also contains switching circuitry to select GSM or DCS/PCS bands and select high or low power modes.