The SKY67012-396LF is GaAs, pHEMT Low-Noise Amplifier (LNA) with an active bias and on-die stability structures enabling simple external matching The advanced GaAs pHEMT enhancement mode process provides excellent return loss, lower noise, and higher linearity performance compared to SiGe LNAs. The internal active bias circuitry provides stable performance over temperature, and process variation. The device offers the Designer the ability to externally adjust supply current between 5 – 15 mA. Noise Figure of 0.85 dB, 16.5 dB Gain and 24 dBm OIP3 are achievable at 0.45 GHz with 3.3V supply and 15 ma of bias current. The device can also be biased from 1.8 to 5V and will still achieve an OIP3 of 18 dBm, and 15 dBm OP1dB with only 5 mA of bias current from 3.3V supply. This LNA is ideal for use in battery powered wireless transceivers. The SKY67012-396LF operates in the frequency range of 300 to 600 MHz and the associated evaluation board is optimized for operation in the 433 MHz ISM band. Evaluation boards optimized for different voltages and frequency ranges are available upon request. For 866 & 915 MHz ISM band operation we recommend the pin compatible SKY67013-396LF and for the 2450 MHz ISM band the SKY67014-396LF. All these LNA’s are manufactured in a compact, 2 x 2 mm, 8-pin Dual Flat (DFN) package and are categorized as Skyworks Green.