参数 |
数值 |
_Return Loss_ 0.1-40 GHz (dB) |
15 |
_Attenuation Flatness_ 0.1-40 GHz (dB) |
0.8 |
_Attenuation Flatness_ 0.1-26.5 GHz (dB) |
0.5 |
Attenuation Tolerance @ DC (dB) |
±0.35 |
Nominal Attenuation (dB) |
8 |
_Return Loss_ 0.1-12 GHz (dB) |
23 |
_Return Loss_ 0.1-26.5 GHz (dB) |
18 |
_Attenuation Flatness_ 0.1-12 GHz (dB) |
0.3 |
The ATN3580 series of attenuator chips incorporate thin film resistors on high resistivity silicon chips to achieve precision attenuation, tight flatness and high return loss to 40 GHz. The design uses a balanced TEE resistive structure to assure broad bandwidth performance. The thin film technology offers improved power handling capability in comparison to the traditional thick film printed attenuator. All ATN3580 attenuator chips are specified for their attenuation at DC. In addition, a wafer probe sample test is performed to 40 GHz to assure meeting the flatness specification. Skyworks' measurements indicate that attenuation typically increases with increasing frequency, as shown in Figure 1.