FEATURE
◆ 3.3V Power Supply
◆ Maximum Linear Output Power for 11g usage : +21 dBm ( 54Mbps OFDM 64 QAM )
◆ Maximum Linear Output Power for 11b usage : +26 dBm ( 11Mbps CCK )
◆ Small signal gain : 33.5dB
◆ On-chip input matching
◆ Operation ambient temperature: -40 ~ +85 °C
◆ Lead-free RoHS compliant

DESCRIPTION
The RTC6691E silicon-germanium (SiGe) power amplifier (PA) is designed to operate in 2.4GHz ISM band, compatible with 802.11b/g wireless LAN system with high power, high gain. The Amplifier consists of 3 gain stages with inter-stage matching, build-in input matching network, and a power detector for close loop power control operation. In 802.11g mode (OFDM 64QAM, 54Mbps), it provides a low EVM (Error-Vector magnitude) of 3% at +21dBm linear output power. The device is packaged in a tiny industry-standard 16-lead surface mount package QFN16 3x3.