| 参数 |
数值 |
| I Region Thickness (µm) Nominal |
28 |
| C T (pF) 30 V, F=1 MHz |
0.6 Max. |
| Package |
2 x 2 mm QFN |
| R S I F = 10 mA F = 100 MHz (Ω) |
1.5 Max. |
| C T (pF) 6 V, F=1 MHz |
|
| V B I R = 10 µA (V) |
250 Min. |
| C T (pF) 0 V, F=1 GHz |
— |
| C T (pF) 0 V, F=1 MHz |
— |
| Carrier Lifetime T L (ns) I F =10 mA |
1.1 Typ. |
| 系列 |
- |
| 类别 |
Discrete Semiconductor Products |
| 二级管类型 |
PIN - Single |
| 电压-峰值反向(最大) |
250V |
| 电流-最大 |
200mA |
| 电容 |
0.14pF @ 6V, 1MHz |
| 电阻 |
1.5 Ohm @ 10mA, 500MHz |
| 功率耗散 |
- |
The CLA4609-086LF is a surface mountable, low capacitance silicon PIN limiter diode designed as a shunt connected PIN diode for high power limiter applications from 10 MHz to over 6 GHz. Maximum resistance at 100 mA is 1.5 Ω and maximum capacitance at 30 V is 0.6 pF. The combination of low junction capacitance, low parasitic inductance, low thermal resistance, and nominal 28 μm I-region width, makes the CLA4609-086LF useful in large signal limiter applications. The threshold level is +38 dBm, nominal.
CLA4609-086LF: S-Parameters
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