| 参数 |
数值 |
| V F I F = 10 mA (V) |
0.80 Typ. |
| Typical Carrier Lifetime I F = 10 mA (ns) |
700 |
| Min. V B I R = 10 µA (V) |
200 |
| R S I F = 100 mA F = 100 MHz (Ω) |
1.5 Max. |
| C T V R = 5 V (pF) |
|
| R S I F = 1 mA F = 100 MHz (Ω) |
— |
| C T V R = 20 V (pF) |
|
| C T V R = 30 V (pF) |
0.35 Max. |
| R S I F = 10 mA F = 100 MHz (Ω) |
3 Max. |
| 系列 |
- |
| 类别 |
Discrete Semiconductor Products |
| 二级管类型 |
PIN - Single |
| 电压-峰值反向(最大) |
200V |
| 电流-最大 |
1.5A |
| 电容 |
0.35pF @ 30V, 1MHz |
| 电阻 |
1.5 Ohm @ 100mA, 100MHz |
| 功率耗散 |
3W |
The SMP1302-085LF is a surface mountable, low capacitance silicon PIN diode designed as a shunt connected PIN diode for high power, high volume switch and attenuator applications from 10 MHz to beyond 6 GHz. Maximum resistance at 100 mA is 1.5 Ω and maximum capacitance at 30 V is 0.3 pF. The combination of low junction capacitance, low parasitic inductance, low thermal resistance, and nominal 50 μm I-region width, makes the SMP1302-085LF useful in large signal switches and attenuator applications. The device has a 3 W dissipation power rating, making it capable of handling more than 50 W Continuous Wave (CW) and 500 W peak (1 μs pulse, 1 percent duty cycle) in a shunt-connected transmit/receive (T/R) switch. Design information for high power switches may be found in the Skyworks Application Note, Design With PIN Diodes (document number 200312) .
SMP1302-085LF: S-Parameters
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