分立器件-RF二极管-SMS7621-060

参数	数值
V F I F = 1 mA (mV)	260-320
Max. C T @ 0 V (pF)	0.18
Series Resistance (Ω)	12
V F I F = 0.1 mA (mV)
Video Resistance @ 0 V (Ω)
Typ. C T @ 0.15 V (pF)
V B I R = 10 µA (V)	2 Min.
系列	-
类别	Discrete Semiconductor Products
二级管类型	Schottky - Single
电压-峰值反向(最大)	2V
电流-最大	50mA
电容	0.18pF @ 0V, 1MHz
电阻	-
功率耗散	75mW

The SMS7621-060 is a silicon, low-barrier N-type Schottky diode with an ultra-miniature 0201 footprint. This diode may be used in detector circuits, sampling circuits, and mixer circuits. The low series resistance of this low-barrier diode enables good performance as a low-level mixer at frequencies up to 26 GHz and higher.

文档(Document)

序号	PDF	描述
1	Handling Precautions for Schottky Barrier Mixer and Detector Diodes	Handling Precautions for Schottky Barrier Mixer and Detector Diodes
2	Mixer and Detector Diodes	Mixer and Detector Diodes
3	SMS7621-060: Surface Mount, 0201 Low-Barrier Silicon Schottky Diode	SMS7621-060: Surface Mount, 0201 Low-Barrier Silicon Schottky Diode
4	http://china.skyworksinc.com/uploads/documents/201294D.pdf	http://china.skyworksinc.com/uploads/documents/201294D.pdf
5	文档(Document)

SMS7621-060

文档(Document)

所有产品

应用方案

新闻中心

关于科通