参数 |
数值 |
Rs Series Resistance Max 2 (Ω) |
1.2 |
Ct Total Capacitance 3 Vr=1 V (pF) Typ. |
58 |
Ct Total Capacitance 3 Vr=12 V (pF) Typ. |
— |
Ct Total Capacitance 3 Vr=20 V (pF) Typ. |
3.2 |
Total Capacitance Ratio Min. 1 |
20.6 |
Capacitance Ratio Range (V) |
1.0 to 28 |
Ct Total Capacitance 3 Vr=4 V (pF) Typ. |
26.9 |
Vr Reverse Breakdown Voltage Ir = 10 µA (V) Min. |
32 |
Ct Total Capacitance 3 Vr=8 V (pF) Typ. |
8 |
Package Type |
SC-79 |
系列 |
- |
类别 |
Discrete Semiconductor Products |
电容@ Vr,F |
2.89pF @ 28V, 1MHz |
电容比 |
22 |
电容比条件 |
C1/C28 |
电压-峰值反向(最大) |
32V |
二极管型 |
Surface Mount |
在 Vr、F时的Q值 |
- |
安装类型 |
Single |
供应商设备封装 |
SC-79 |
The SMV1801-079LF is a silicon hyperabrupt junction varactor diode specifically designed for battery operation.The specified high capacitance ratio and low R S of this varactor make it appropriate for low noise VCOs used at frequencies in wireless systems to frequencies beyond 2.5 GHz. Applications include low noise and wideband UHF and VHF VCO for GSM, PCS, CDMA and analog phones.