参数 |
数值 |
OIP3 (dBm) |
18 |
Gain Typ. (dB) |
12 |
Frequency Range (GHz) |
1.5-3.0 |
OP 1 dB (dBm) |
16 |
Noise Figure Typ. (dB) |
0.95 |
Test Frequency (GHz) |
2.45 |
Supply Current Typ. (mA) |
5 |
V DD (V) |
3.3 |
Package (mm) |
8-pin DFN, 2 x 2 x 0.75 |
系列 |
- |
工作电流 |
5mA |
类别 |
RF/IF and RFID |
频率 |
1.5GHz ~ 3GHz |
增益 |
12dB |
噪声因数 |
0.95dB |
P1dB |
5dBm |
RF类型 |
ISM |
测试频率 |
2.45GHz |
工作电压 |
3 V ~ 5.5 V |
The SKY67014-396LF is GaAs, pHEMT Low-Noise Amplifier (LNA) with an active bias and on-die stability structures enabling simple external matching The advanced GaAs pHEMT enhancement mode process provides excellent return loss, lower noise, and higher linearity performance compared to SiGe LNAs. The internal active bias circuitry provides stable performance over temperature, and process variation. The device offers the ability to externally adjust supply current. Noise figure of <1.0 dB, 12 dB gain and 15 dBm OP1dB are achievable at 2.45 GHz with 3.3V supply and only 5 ma of bias current, The device can also be biased from 1.5 to 5V and will achieve a OIP3 of 27 dBm with 5V supply and 20 mA bias current. The SKY67014-396LF operates in the frequency range of 1.5 to 3.0 GHz and the associated evaluation board is optimized for operation in the 2.4 GHz ISM band. The amplifier is manufactured in a compact, 2 x 2 mm, 8-pin Dual Flat No-Lead (DFN) package.