Memory-SDRAM-

W947D6HBHX5E

brand：Winbond

Description：This is a 128Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 16bit

Packaging：

Packaging：60VFBGA

Lead-free status/ROHS： No

Category：SDRAM

Seller：科通芯城自营

Parameter	Value
Voltage	1.8V / 1.8V
Package	60VFBGA
Status	P
Density	128 Mbit
Organization	x16
RoHS	Y
Speed Grade	200MHz, -25 to 85C

Description
This is a 128Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 16bits
Features
Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V
Data width: x16
Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz
Standard Self Refresh Mode
PASR、ATCSR、Power Down Mode、DPD
Programmable output buffer driver strength
Four internal banks for concurrent operation
CAS Latency: 2 and 3
Burst Length: 2、4 、8 and 16
Operating Temperature Range: Extended (-25°C ~ 85°C), Industrial (-40°C ~ 85°C)
Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver

文档(Document)

No.	PDF	Description
1	文档(Document)

W947D6HBHX5E

文档(Document)

PRODUCTS

SOLUTIONS

NEWS

ABOUT US