| Parameter |
Value |
| Voltage |
3V/3.3V |
| Package |
TSOP 56/LFBGA 64 |
| Status |
S |
| Density |
128Mbit |
| comment |
Samples Available |
| Organization |
16M x 8/8M x 16 |
| Remark |
High Sector Low Sector |
| RoHS |
Y |
| Speed |
90ns |
| Temp |
-40 to +85 |
Description
128M-bit 3 Volt Parallel Flash Memory with Page Mode
Features
64k-Word/128k-Byte uniform sector architecture
32-Word/64-Byte write buffer
8-Word/16-Byte page read buffer
Secured Silicon Sector area
Enhanced Sector Protect using Dynamic and Individual mechanisms
Polling/Toggling methods are used to detect the status of program and erase operation
Suspend and resume commands used for program and erase operations
More than 100,000 erase/program cycles
More than 20-year data retention
Software and Hardware write protection
Low power consumption
Deep power down mode
Wide temperature range
Compatible manufacturer ID for drop-in replacement
Faster Erase and Program time
CFI (Common Flash Interface) support
Single 3V Read/Program/Erase (2.7 - 3.6V)
Enhanced Variable IO control
#WP/ACC Input
Hardware reset input (#reset) resets device
Ready/#Busy output (RY/#BY) detects completion of program or erase cycle
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