| Parameter |
Value |
| Voltage |
3V/3.3V |
| Package |
TSOP 56?/LFBGA 64?/TSOP 48/TFBGA 48 |
| Status |
S |
| Density |
32Mbit |
| comment |
Samples Available |
| Organization |
4M x 8/2M x 16 |
| Remark |
Top Boot Bottom Boot High Sector Low Sector |
| RoHS |
Y |
| Speed |
70ns |
| Temp |
-40 to +85 |
Description
32M-bit 3 Volt Parallel Flash Memory with Page Mode
Features
32k-Word/64k-Byte uniform sector architecture
16-Word/32-Byte write buffer
8-word/16-Byte page read buffer
Secured Silicon Sector area
Enhanced Sector Protect using Dynamic and Individual mechanisms?
Polling/Toggling methods are used to detect the status of program and erase operation
Suspend and resume commands used for program and erase operations
More than 100,000 erase/program cycles
More than 20-year data retention
Low power consumption
Deep power down mode
Wide temperature ranges
Compatible manufacturer ID for drop-in?replacement
Faster Erase and Program time
CFI(Common Flash Interface) support
Single 3V Read/Program/Erase(2.7 - 3.6V)
Enhanced Variable IO control
#WP/ACC Input
Ready/#Busy output(RY/#BY)detects completion of program or erase cycle
文档(Document)
