| Parameter |
Value |
| Voltage |
3V/3.3V |
| Package |
TSOP48/- |
| Status |
EOL |
| Density |
16Mbit |
| comment |
Obsolete |
| Organization |
2M x 8/1M x 16 |
| Remark |
Single Bank |
| RoHS |
Y |
| Speed |
70ns |
| Temp |
-40 to +85 |
Description
The W19B160B is a 16Mbit, 2.7~3.6 volt CMOS flash memory organized as 2M?x 8 or 1M?x 16 bits. For flexible erase capability, the 16Mbits of data are divided into one 16Kbyte, two 8Kbyte, one 32Kbyte, and thirty-one 64Kbyte sectors. The word-wide (x 16) data appears on DQ15-DQ0, and byte-wide (x 8) data appears on DQ7?DQ0. The device can be programmed and erased in-system with a standard 2.7~3.6V power supply. A 12-volt VPP is not required. The unique cell architecture of the W19B160B results in fast program/erase operations with extremely low current consumption. The device can also be programmed and erased by using standard EPROM programmers.
Features
Manufactured on WinStack-S 0.13um process technology
Operating Voltage: 3.0V (2.7V-3.6V)
Organization: 2Mbx8 / 1Mbx16
Speed: 70ns
Boot Block: Top / Bottom
Secured Silicon Sector (256 Byte)
文档(Document)
