Discrete devices-Variable Capacitance Diode-

Parameter	Value
Vr Reverse Breakdown Voltage Ir = 10 µA (V) Min.	30
Package Type	SC-79
Capacitance Ratio Range (V)	0.5 to 28
Ct Total Capacitance 3 Vr=12 V (pF) Typ.	—
Ct Total Capacitance 3 Vr=4 V (pF) Typ.	4.85
Rs Series Resistance Max 2 (Ω)	3
Ct Total Capacitance 3 Vr=8 V (pF) Typ.	2.17
Total Capacitance Ratio Min. 1	12
Ct Total Capacitance 3 Vr=1 V (pF) Typ.	10.43
Ct Total Capacitance 3 Vr=20 V (pF) Typ.	1.06
系列	-
类别	Discrete Semiconductor Products
电容@ Vr,F	1.05pF @ 28V, 1MHz
电容比	16
电容比条件	C0.5/C28
电压-峰值反向(最大)	30V
二极管型	Surface Mount
在 Vr、F时的Q值	-
安装类型	Single
供应商设备封装	SC-79

The SMV1800-079LF is a silicon hyperabrupt junction varactor diode specifically designed for battery operation. The specified high capacitance ratio and low R S of this varactor make it appropriate for low noise VCOs used in wireless systems to frequencies beyond 2.5 GHz. Applications include low noise and wideband UHF and VHF VCO for GSM, PCS, CDMA and analog phones.

文档(Document)

No.	PDF	Description
1	http://china.skyworksinc.com/uploads/documents/200916E.pdf	http://china.skyworksinc.com/uploads/documents/200916E.pdf
2	SMV1800-079LF: Hyperabrupt Junction Tuning Varactor	SMV1800-079LF: Hyperabrupt Junction Tuning Varactor
3	文档(Document)

SMV1800-079LF

文档(Document)

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