Discrete devices-Variable Capacitance Diode-

Parameter	Value
Rs Series Resistance Max 2 (Ω)	1.2
Ct Total Capacitance 3 Vr=1 V (pF) Typ.	58
Ct Total Capacitance 3 Vr=12 V (pF) Typ.	—
Ct Total Capacitance 3 Vr=20 V (pF) Typ.	3.2
Total Capacitance Ratio Min. 1	20.6
Capacitance Ratio Range (V)	1.0 to 28
Ct Total Capacitance 3 Vr=4 V (pF) Typ.	26.9
Vr Reverse Breakdown Voltage Ir = 10 µA (V) Min.	32
Ct Total Capacitance 3 Vr=8 V (pF) Typ.	8
Package Type	SC-79
系列	-
类别	Discrete Semiconductor Products
电容@ Vr,F	2.89pF @ 28V, 1MHz
电容比	22
电容比条件	C1/C28
电压-峰值反向(最大)	32V
二极管型	Surface Mount
在 Vr、F时的Q值	-
安装类型	Single
供应商设备封装	SC-79

The SMV1801-079LF is a silicon hyperabrupt junction varactor diode specifically designed for battery operation.The specified high capacitance ratio and low R S of this varactor make it appropriate for low noise VCOs used at frequencies in wireless systems to frequencies beyond 2.5 GHz. Applications include low noise and wideband UHF and VHF VCO for GSM, PCS, CDMA and analog phones.

文档(Document)

No.	PDF	Description
1	SMV1801-079LF: Hyperabrupt Junction Tuning Varactor	SMV1801-079LF: Hyperabrupt Junction Tuning Varactor
2	http://china.skyworksinc.com/uploads/documents/200915E.pdf	http://china.skyworksinc.com/uploads/documents/200915E.pdf
3	文档(Document)

SMV1801-079LF

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